The Evaluation of Thin Silicon Layers by Spreading Resistance Measurements

Gilbert Gruber; Robert Pfeifer

doi:10.1520/STP47409S

SYMPOSIA PAPER Published: 01 January 1974

STP47409S

The Evaluation of Thin Silicon Layers by Spreading Resistance Measurements

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The spreading resistance measurement technique is the only one capable of providing precise thickness measurements and detailed concentration profiles on any type of active device layer or structure formed in silicon on a routine basis. The methods employed in the evaluation of thin layer structures of the type used for microwave devices is discussed and the application of these methods to thin NN⁺, P⁺NN⁺ and P⁺N silicon structures formed by combinations of diffusion, epitaxy and ion implantation is illustrated.

Author Information

Gruber, Gilbert, A.

Solid State Measurements, Inc., Monroeville, Pennsylvania

Pfeifer, Robert, F.

NCR Microelectronics Division, Miamisburg, Ohio

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Details

Developed by Committee: F01

Pages: 209–216

DOI: 10.1520/STP47409S

ISBN-EB: 978-0-8031-6938-8

ISBN-13: 978-0-8031-6661-5

The Evaluation of Thin Silicon Layers by Spreading Resistance Measurements

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