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STP Published: 1974

STP572-EB

Semiconductor Measurement Technology: Spreading Resistance Symposium

Editor(s): J. Ehrstein

Table of Contents

STP Individual Article Download Free

Welcoming Remarks at the ASTM/NBS Symposium on Spreading Resistance Measurements Gaithersburg, Maryland June 13, 1974

Judson C. French

Welcoming Remarks from ASTM

Robert I. Scace

Keynote Address Symposium on Spreading Resistance Gaithersburg, Maryland June 13–14, 1974

Robert G. Mazur

The Physics of Spreading Resistance Measurements

Stephen J. Fonash

Formal Comparison of Correction Formulae for Spreading Resistance Measurements on Layered Structures

P. J. Severin

Two-Point Probe Correction Factors

D. H. Dickey

On the Validity of Correction Factors applied to Spreading Resistance Measurements on Bevelled Structures

P. M. Pinchon

SRPROF, A Fast and Simple Program for Analyzing Spreading Resistance Profile Data

B. L. Morris, P. H. Langer, J. C. White

Multilayer Analysis of Spreading Resistance Measurements

Gregg A. Lee

An Automated Spreading Resistance Test Facility

James C. White

Angle-Bevelling Silicon Epitaxial Layers, Technique and Evaluation

P. J. Severin

Spreading Resistance Measurements on Silicon with Non-blocking Aluminum-Silicon Contacts

J. Krausse

The Preparation of Bevelled Surfaces for Spreading Resistance Probing by Diamond Grinding and Laser Measurement of Bevel Angles

A. Mayer, S. Shwartzman

Spreading Resistance Correction Factors for (111) and (100) Surfaces

H. Murrmann, F. Sedlak

On the Calibration and Performance of a Spreading Resistance Probe

H. J. Ruiz, F. W. Voltmer

Comparison of the Spreading Resistance Probe with other Silicon Characterization Techniques

Walter H. Schroen, Gregg A. Lee, Fred W. Voltmer

Preparation of a Lightly Loaded, Close-Spaced Spreading Resistance Probe and its Application to the Measurement of Doping Profiles in Silicon

J. L. Deines, E. F. Gorey, A. E. Michel, M. R. Poponiak

A Direct Comparison of Spreading Resistance and MOS-CV Measurements of Radial Resistivity Inhomogeneities on PICTUREPHONE® Wafers

J. R. Edwards, H. E. Nigh

Investigations on Local Oxygen Distribution in Silicon Single Crystals by Means of Spreading Resistance Technique

Fritz G. Vieweg-Gutberlet

Use of the Spreading Resistance Probe for the Characterization of Microsegregation in Silicon Crystals

F. W. Voltmer, H. J. Ruiz

Effects of Oxygen and Gold on Silicon Power Devices

Jacques Assour

The Evaluation of Thin Silicon Layers by Spreading Resistance Measurements

Gilbert A. Gruber, Robert F. Pfeifer

Evaluation of the Effective Epilayer Thickness by Spreading Resistance Measurement

H. Murrmann, F. Sedlak

The Experimental Investigation of Two-Point Spreading Resistance Correction Factors for Diffused Layers

N. Goldsmith, R. V. D'Aiello, R. A. Sunshine

Application of the Spreading Resistance Technique to Silicon Characterization for Process and Device Modeling

Walter H. Schroen

Improved Surface Preparation For Spreading Resistance Measurements on -type Silicon

J. R. Ehrstein

Discussion Session Free

Concluding Remarks Free

Paul Langer

Appendix-Bibliography Free

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Details

Developed by Committee: F01

Pages: 288

DOI: 10.1520/STP572-EB

ISBN-EB: 978-0-8031-6938-8

ISBN-13: 978-0-8031-6661-5