Effects of Oxygen and Gold on Silicon Power Devices

Jacques Assour

doi:10.1520/STP47408S

SYMPOSIA PAPER Published: 01 January 1974

STP47408S

Effects of Oxygen and Gold on Silicon Power Devices

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Several important features that make the two-probes spreading resistance technique a unique process control tool for designing and manufacturing silicon power devices are elucidated in terms of the effects of electrically active oxygen and gold centers on the characteristics of transistors, thyristors, and rectifiers. The effectiveness of the spreading resistance technique is compared to other commonly practiced techniques for the investigation of diffusion mechanisms of oxygen in homotaxial NPN transistors and of gold in fast switching rectifiers and thyristors.

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Assour, Jacques

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Details

Developed by Committee: F01

Pages: 201–208

DOI: 10.1520/STP47408S

ISBN-EB: 978-0-8031-6938-8

ISBN-13: 978-0-8031-6661-5

Effects of Oxygen and Gold on Silicon Power Devices

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