Angle-Bevelling Silicon Epitaxial Layers, Technique and Evaluation

P. Severin

doi:10.1520/STP47398S

SYMPOSIA PAPER Published: 01 January 1974

STP47398S

Angle-Bevelling Silicon Epitaxial Layers, Technique and Evaluation

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The properties of a steel probe for a spreading-resistance system are discussed stressing the effect of micro- and macrocontacts. The need is explained for producing small-angle bevels and a lapping jig for making such bevels is described. With small-angle bevels the slice topography cannot be neglected and a simple instrument is described by which the surface topography of the whole slice can be recorded. By recording the slice topography before and after bevelling the local reduction of thickness by the bevelling process is determined. This method can be used for angles between 1/500 and 1/2000. It is indispensable for the proper interpretation of spreading resistance measurements on bevelled N on N⁺ junctions.

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Severin, P., J.

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Details

Developed by Committee: F01

Pages: 99–108

DOI: 10.1520/STP47398S

ISBN-EB: 978-0-8031-6938-8

ISBN-13: 978-0-8031-6661-5

Angle-Bevelling Silicon Epitaxial Layers, Technique and Evaluation

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