Changes in Stability of Germanium Alloy Transistors Through Etching, Washing, and Encapsulation Processing

Arnold Borofsky

doi:10.1520/STP41245S

SYMPOSIA PAPER Published: 01 January 1961

STP41245S

Changes in Stability of Germanium Alloy Transistors Through Etching, Washing, and Encapsulation Processing

Source

Changes in the I_CBO, I_ebo and h_FE reliability of germanium alloy transistors (npn and pnp computer types) as a result of etching, washing, and encapsulation processing have been investigated beyond 2500 hr. Data following operation at maximum rated power and 100 C storage data are presented for hydrogen peroxide and modified hydrogen peroxide etching solutions; for tank and turbulent washing; and for five types of fluid-base and three types of dry encapsulants.

Author Information

Borofsky, Arnold, J.

Reliability Engineering and Analysis, Sylvania Electric Products, Inc., Woburn, Mass.

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Details

Developed by Committee: F01

Pages: 243–253

DOI: 10.1520/STP41245S

ISBN-EB: 978-0-8031-5963-1

ISBN-13: 978-0-8031-6117-7

Changes in Stability of Germanium Alloy Transistors Through Etching, Washing, and Encapsulation Processing

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