Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

M Yahagi; M Satoh; K Kuriyama; K Iwamura; C Kim; F Shiraishi

doi:10.1520/STP32682S

SYMPOSIA PAPER Published: 01 January 1984

STP32682S

Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

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Neutron irradiation at a flux of 5 × 10¹¹ neutrons /cm² sec for 18 hr has been performed on n-type GaAs with 5.9 × 10⁻²Ω-cm (n= 2.1 × 10¹⁶/cm³). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.

Author Information

Yahagi, M

Satoh, M

Kuriyama, K

Iwamura, K

Kim, C

Shiraishi, F

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Details

Developed by Committee: F01

Pages: 587–594

DOI: 10.1520/STP32682S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

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