Effects of Hydrogen on Defects in Neutron Irradiated Silicon

YC Du; YF Zhang; XT Meng

doi:10.1520/STP32680S

SYMPOSIA PAPER Published: 01 January 1984

STP32680S

Effects of Hydrogen on Defects in Neutron Irradiated Silicon

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Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P-type S_i (H) irradiated by neutron have been studied by DLTS, IR absorption, resistivity and minority carrier lifetime measurements. In as-grown and neutron irradiated S_i (H), some S_i -H IR bands and hydrogen-related deep centers have been observed. Because of hydrogen in silicon, the production rates of radiation defects decreased, and the passivation action of hydrogen emerged unambiguously at 200°c annealing temperature or higher. These cause the differences of annealing behavior of the resistivity and lifetime between S_i(H) and S_i(A_r).

Author Information

Du, YC

Zhang, YF

Meng, XT

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Developed by Committee: F01

Pages: 566–574

DOI: 10.1520/STP32680S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

Effects of Hydrogen on Defects in Neutron Irradiated Silicon

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