Production of Detector-Grade Silicon by Neutron Transmutation Doping

Wv Ammon; J Kemmer

doi:10.1520/STP32678S

SYMPOSIA PAPER Published: 01 January 1984

STP32678S

Production of Detector-Grade Silicon by Neutron Transmutation Doping

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High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.

Author Information

Ammon, Wv

Kemmer, J

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Details

Developed by Committee: F01

Pages: 546–557

DOI: 10.1520/STP32678S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

Production of Detector-Grade Silicon by Neutron Transmutation Doping

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