Production and Development of Neutron Transmutation Doped Silicon

H Herzer

doi:10.1520/STP32677S

SYMPOSIA PAPER Published: 01 January 1984

STP32677S

Production and Development of Neutron Transmutation Doped Silicon

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Considering the production of NTD-silicon our interest is focussing on market growth, application fields and questions like reactor capacity, costs and material quality. Market growth still is in a further steady increase and since IC application particularly CMOS devices are not expected to turn over to NTD-silicon there is plenty of reactor capacity available to follow the market increase in power device application.

Further development of NTD-silicon is discussed regarding maximum diameter, upper resistivity limit and quality aspects.

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Herzer, H

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Developed by Committee: F01

Pages: 533–545

DOI: 10.1520/STP32677S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

Production and Development of Neutron Transmutation Doped Silicon

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