Comparison of Depth Profiling B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling

JR Ehrstein; RG Downing; BR Stallard; DS Simons; RF Fleming

doi:10.1520/STP32670S

SYMPOSIA PAPER Published: 01 January 1984

STP32670S

Comparison of Depth Profiling B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling

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Depth profiling of intentional dopants is an important measurement in the semiconductor industry both for process and device modeling and for process control. A comparison of ¹⁰B implants into silicon as measured by Spreading Resistance Profiling (SRP), Secondary Ion Mass Spectrometry (SIMS), and by Neutron Depth Profiling (NDP) is presented. The boron implantations were done at several fluences and energies into bare silicon and through several thicknesses of thermally grown oxides. Sources of error and their relation to observed differences among the techniques will be discussed.

Author Information

Ehrstein, JR

Downing, RG

Stallard, BR

Simons, DS

Fleming, RF

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Developed by Committee: F01

Pages: 409–425

DOI: 10.1520/STP32670S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

Comparison of Depth Profiling B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling

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