SYMPOSIA PAPER
Published:
01 January 1984
STP32663S
A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope
SourceA new high sensitivity microsampling accessory incorporating an all-reflecting microscope for use with FT-IR instruments is described. Measurements of the interstitial oxygen and substitutional carbon concentrations in silicon from sampling areas as small as 100 μm × 100 μm are described. A reflectance version of the microsampling accessory has been used for mapping the epitaxial film thickness on silicon from areas as small as 50 μm × 50 μm.
Author Information
Krishnan, K
Kuehl, D
Related
Reprints and Permissions
Details
Developed by Committee: F01
Pages: 325–334
DOI: 10.1520/STP32663S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7