Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy

LW Shive; BK Schulte

doi:10.1520/STP32662S

SYMPOSIA PAPER Published: 01 January 1984

STP32662S

Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy

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Silicon wafer users must often test non-ideal one-side polished slices for oxygen content. This data is usually biased with respect to the true value. However, this bias can now be eliminated for some types of one-side polished wafers by using calibration programs that are provided with most commercial FTIR instruments. These programs require a calibration wafer of known oxygen content and with a thickness and a backside surface similar to those of the unknown. The effectiveness of this procedure for eliminating bias for several non-ideal sample types is described.

Author Information

Shive, LW

Schulte, BK

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Details

Developed by Committee: F01

Pages: 320–324

DOI: 10.1520/STP32662S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy

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