The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon

JO Borland

doi:10.1520/STP32653S

SYMPOSIA PAPER Published: 01 January 1984

STP32653S

The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon

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The rate and concentration of thermal donors generated during 450°C anneals were observed to be dependent on wafer thermal history. Oxygen thermal donors formed by the silicon-vacancy and silicon interstitial models were examined and the silicon-interstitial donor formation was observed to be the dominating mechanism for the 450°C oxygen thermal donor. Thermally induced microdefects were also observed. Depending on the wafer thermal history less than 1 × 10¹⁴ donors/cm³ to as much as 3.7 × 10¹⁴ donors/cm³ were formed during the 450°C anneals.

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Borland, JO

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Details

Developed by Committee: F01

Pages: 201–218

DOI: 10.1520/STP32653S

ISBN-EB: 978-0-8031-4915-1

ISBN-13: 978-0-8031-0403-7

The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon

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