Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes

G Borionetti; M Domenici; G Ferrero

doi:10.1520/STP26055S

SYMPOSIA PAPER Published: 01 January 1989

STP26055S

Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes

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Polysilicon deposition process parameters have been addressed for the preparation of poly layers having characteristics that increase extrinsic gettering behaviour, irrespective of oxygen enhanced precipitation, thus making them particularly suitable for relatively high device processing temperatures.

Morphological parameters that correlate with extrinsic gettering efficiency have been found to be grain sizes and their preferred orientation, so care was given to produce and consistently reproduce such characteristics by a suitable choice of the deposition process parameters.

Author Information

Borionetti, G

Domenici, M

Ferrero, G

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Details

Developed by Committee: F01

Pages: 400–411

DOI: 10.1520/STP26055S

ISBN-EB: 978-0-8031-5107-9

ISBN-13: 978-0-8031-1273-5

Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes

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