Semiconductor Fabrication: Technology and Metrology
Editor(s): D C Gupta
STP 990 presents 35 papers on: Silicon Crystal Growth and Epitaxial Deposition Techniques; Fabrication Technology; Micro contamination; Metallization and Interconnects; Material Defects and Gettering; and Control Charts, Standards, and Specifications.
Table of Contents
DC Gupta
K Yamashita, S Kobayashi, T Aoki, Y Kawata, T Shiraiwa
LD Dyer
MD Robinson, LH Lawrence
H Suga, M Ichizawa, K Endo, K Tomizawa
W Wijaranakula, JH Matlock, H Mollenkopf
HL Berkowitz
DJ Ruprecht, LG Hellwig, JA Rossi
RG Mazur, RJ Hillard
CL Ygartua, R Swaroop
R Subrahmanyan, HZ Massoud, RB Fair
V Starov, L Lane
JK Bhardwaj, A Kiermasz, MA Stephens, SJ Harrington, AD McQuarrie
JM Heddleson, MW Horn, SJ Fonash
LD Clements, JE Busse, J Mehta
C-H Chen, S DeOrnellas, B Burke
TR Lettieri
SH Goldsmith, GP Grundelman
A Lieberman
FM Dumesnil, M Bruner, M Berman
T Iwamori, Y Sakata, H Kojima, Y Yatsuda
HG Parks, CE Logan, CA Fahrenz
Y Kuo
P Eichinger, HJ Rath, H Schwenke
T Shiraiwa, N Fujino, S Sumita, Y Tanizoe
VK Khanna, DK Thakur, KL Jasuja, WS Khokle
PK Sinha, WS Glaunsinger
M Goldstein, J Makovsky
GA Rozgonyi, RR Kola, KE Bean, K Lindberg
W Wijaranakula, S Shimada, H Mollenkopf, JH Matlock, M Stuber
A Derheimer, S Takamizawa, JH Matlock, H Mollenkopf
G Borionetti, M Domenici, G Ferrero
DJ Friedman
GA Keller, WG Waldo, RF Babasick
RK Lowry
GC Tassey, RI Scace, JC French