Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N (100) Epitaxial Wafers

W Wijaranakula; S Shimada; H Mollenkopf; JH Matlock; M Stuber

doi:10.1520/STP26053S

SYMPOSIA PAPER Published: 01 January 1989

STP26053S

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N (100) Epitaxial Wafers

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Oxygen precipitation in silicon heavily-doped with antimony, particularly at the concentration range higher than 7×10¹⁷ atoms/cm³, is known to be severely suppressed because of the doping concentration effect. This results in a reduction in internal gettering (IG) efficiency in the N/N⁺ epitaxial wafers. In this work, substrate wafers heavily-doped with antimony were pre-annealed prior to the epitaxial deposition process. Post-epitaxial annealing was used for enhancing precipitation in asdeposited epitaxial wafers. The results indicate that both pre- and post-epitaxial annealing can improve oxygen precipitation and IG efficiency. The relationship between oxide breakdown, generation lifetime and bulk defect density is observed.

Author Information

Wijaranakula, W

Shimada, S

Mollenkopf, H

Matlock, JH

Stuber, M

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Details

Developed by Committee: F01

Pages: 371–386

DOI: 10.1520/STP26053S

ISBN-EB: 978-0-8031-5107-9

ISBN-13: 978-0-8031-1273-5

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N (100) Epitaxial Wafers

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