Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride

LD Clements; JE Busse; J Mehta

doi:10.1520/STP26038S

SYMPOSIA PAPER Published: 01 January 1989

STP26038S

Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride

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A novel dry etching process for silicon dioxide has been developed. This process, carried out at ambient temperature and pressure, uses anhydrous hydrogen fluoride, water vapor in a nitrogen carrier, and a unique processing sequence to achieve etch rates of about 200A/second, with 5 percent or better uniformity.

The overall reaction is a complicated sequence of surface hydration and surface fluorination by adsorption, reaction, and product desorption. This paper presents two proposed reaction mechanisms and describes how experimental data from a laminar flow reactor were used to evaluate the mechanisms.

Author Information

Clements, LD

Busse, JE

Mehta, J

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Developed by Committee: F01

Pages: 182–201

DOI: 10.1520/STP26038S

ISBN-EB: 978-0-8031-5107-9

ISBN-13: 978-0-8031-1273-5

Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride

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