High Dose Arsenic Implant for Bipolar Buried Layers

CL Ygartua; R Swaroop

doi:10.1520/STP26033S

SYMPOSIA PAPER Published: 01 January 1989

STP26033S

High Dose Arsenic Implant for Bipolar Buried Layers

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The use of arsenic ion implant for a low sheet resistance and deep junction buried layer process was investigated. Appropriate ion doses and energy were found to obtain the desired buried layer profile using a pre-implant oxide. A low temperature (1050°C) oxidation was employed to remove the highly damaged surface region after diffusion/anneal of the arsenic implant. Damage was characterized after the buried layer process and epitaxial growth. The electrical performances and relative yield of the bipolar devices made from implanted and deposited (solid-source) arsenic buried layer were compared. The results indicated that implanted buried layer produced almost defect free epitaxial layer in the subsequent processing.

Author Information

Ygartua, CL

Swaroop, R

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Details

Developed by Committee: F01

Pages: 115–125

DOI: 10.1520/STP26033S

ISBN-EB: 978-0-8031-5107-9

ISBN-13: 978-0-8031-1273-5

High Dose Arsenic Implant for Bipolar Buried Layers

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