Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

MD Robinson; LH Lawrence

doi:10.1520/STP26027S

SYMPOSIA PAPER Published: 01 January 1989

STP26027S

Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

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A new single wafer epitaxial silicon reactor, the Epsilon One, is characterized by automated cassette-to-cassette wafer handling, rapid thermal cycle, and high deposition rate for wafers up to 150 mm diameter. This paper describes the reactor, and its results in terms of epi thickness and doping uniformity, epi/substrate transition width, and epi defect density.

Author Information

Robinson, MD

Lawrence, LH

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Details

Developed by Committee: F01

Pages: 30–42

DOI: 10.1520/STP26027S

ISBN-EB: 978-0-8031-5107-9

ISBN-13: 978-0-8031-1273-5

Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

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