Emerging Semiconductor Technology

STP Published: 1987

STP960-EB

Emerging Semiconductor Technology

Fourth in a series, STP 960 addresses new problems in semiconductor processing for the mid ‘80s. A total of 50 papers cover; Epitaxial Technology; Dielectrics and Junction Formation Techniques; Material Defects, Oxygen and Carbon in Silicon; Yield Enhancement and Contamination Control Aspects; Dopant Profiling Techniques and In-Process Measurements; and Fab Equipment: Automation and Reliability.

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Introduction Free

DC Gupta

Silicon and Semiconductors: Partners in the Late 1980's

JE Springgate

ASTM and Semi Standards for the Semiconductor Industry

RI Scace

Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD

R Reif

Thin Silicon Epitaxial Films Deposited at Low Temperatures

H-R Chang, JS Rosczak

Thin Epitaxial Silicon by CVD

SM Fisher, ML Hammond, NP Sandler

Effects of Gettering on Epi Quality for CMOS Technology

C-C Daniel Wong, JO Borland, S Hahn

Silicon Epitaxial Growth on N+ Substrate for CMOS Products

RB Swaroop

Characterization of the in Situ HCl Etch for Epitaxial Silicon

JW Medernach, VA Wells

Doped Oxide Spin-On Source Diffusion

V Ramamurthy

Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance

E Lora-Tamayo, J Du Port de Pontcharra, M Bruel

Measurements of Cross-Contamination Levels Produced by Ion Implanters

LA Larson, BJ Kirby

Some Aspects of Productivity of a Low Pressure CVD Reactor

S Middleman

Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators

S Roberts, JG Ryan, DW Martin

The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation

H-S Lee

Rie Damage and Its Control in Silicon Processing

SJ Fonash, A Rohatgi

The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films

SV Nguyen, JR Abernathey, SA Fridmann, ML Gibson

Monte Carlo Simulation of Plasma Etch Emission Endpoint

EJ Bawolek

Profile Control of Plasma Etched Polysilicon Using Implant Doping

T Abraham, R Theriault

The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits

KC Vanner, JR Cockrill, JA Turner

Quality Control and Optimization During Plasma Deposition of a-Si:H

M Kunst, A Werner, G Beck, U Kuppers, H Tributsch

Effects of Deep UV Radiation on Photoresist in Al Etch

SC Lee, BL Chin

Influence of X-Ray Exposure Conditions on Pattern Quality

V Starov

Palladium Silicide Contact Process Development for VLSI

RN Singh

Characterization of Silicon Surface Defects by the Laser Scanning Technique

HM Liaw, JW Rose, HT Nguyen

Damage Aspects of Ingot-to-Wafer Processing

LD Dyer

Hydrogen in silicon and generation of haze on silicon surface in aging

T Shiraiwa, S Inenaga

Identifying Gettered Impurities in Silicon by LIMA Analysis

MC Arst

Effect of Bulk Defects in Silicon on SiO Film Breakdown

H Suga, K Murai

Free Carrier Absorption and Interstitial Oxygen Measurements

WK Gladden, A Baghdadi

High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

N Inoue, T Arai, T Nozaki, K Endo, K Mizuma

Nature of Process-Induced Si-SiO Defects and Their Interaction with Illumination

S Kar, M Tewari

A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments Method

EC Maass

Computerized Yield Modeling

CH Beck

Particle and Material Control Automation System for VLSI Manufacturing

MD Brain

Semiconductor Yield Enhancement Through Particle Control

ND Casper, BW Soren

Particulate Control in VLSI Gases

JM Davidson, TP Ruane

Spreading Resistance Measurements — An Overview

JR Ehrstein

Some Aspects of Spreading Resistance Profile Analysis

J Albers

Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance

M Pawlik

Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry

GG Sweeney, TR Alvarez

Monte Carlo Calculation of Primary Kinematic Knock-on in Sims

J Albers

A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CV

M Pawlik, RD Groves, RA Kubiak, WY Leong, EHC Parker

Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling

GW Banke, K Varahramyan, GJ Slusser

Mapping Silicon Wafers by Spreading Resistance

RG Mazur

Production Monitoring of 200MM Wafer Processing

WA Keenan, WH Johnson, AK Smith

Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers

T Shiraiwa, T Ochiai, M Sano, Y Tada, T Arai

Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques

JF Black, JM Berak, GG Peterson

Wafer Fab Automation, an Integral Part of the CAM Environment

CA Fiorletta, R Lennard, JG Harper

Computer Integrated Manufacturing: The Realities and Hidden Costs of Automation

MS Ligeti

Industry Considerations in Determining Equipment Reliability

JC Greiner

Appendices Free

Subject Index Free

Author Index Free

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Details

Developed by Committee: F01

Pages: 725

DOI: 10.1520/STP960-EB

ISBN-EB: 978-0-8031-5021-8

ISBN-13: 978-0-8031-0459-4