Radiation Induced Surface Effects on Selected Semiconductor Devices

U. Cocca; N. Koepp-Baker

doi:10.1520/STP44610S

SYMPOSIA PAPER Published: 01 January 1965

STP44610S

Radiation Induced Surface Effects on Selected Semiconductor Devices

Source

A preliminary investigation into the effects of space indigenous radiation on a number of semiconductor devices is described. A Co⁶⁰ source was used to irradiate the devices to an ionization level equivalent to that received by a satellite in a typical orbit in a six-month period. Transistor I_CBO and diode I_R were monitored throughout the irradiation and pre-test and post-test transistor gain measurements were made. The results of the irradiation test are presented in graphical and tabular form. In general, transistor and diode reverse current increased and transistor gain decreased during irradiation. Some recovery was evidenced following storage and temperature annealing cycles.

Author Information

Cocca, U.

General Electric Co., Syracuse, N. Y.

Koepp-Baker, N., B.

Radiation Effects Operation, General Electric Co., Oklahoma City, Oklahoma

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Details

Developed by Committee: E10

Pages: 149–171

DOI: 10.1520/STP44610S

ISBN-EB: 978-0-8031-6009-5

ISBN-13: 978-0-8031-6163-4

Radiation Induced Surface Effects on Selected Semiconductor Devices

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