Proton and Electron Permanent Damage in Silicon Semiconductor Devices

R. Brown

doi:10.1520/STP44608S

SYMPOSIA PAPER Published: 01 January 1965

STP44608S

Proton and Electron Permanent Damage in Silicon Semiconductor Devices

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Data are presented on permanent radiation damage in silicon diodes, p-on-n solar cells, and both n-p-n and p-n-p transistors. This information was accumulated from proton (2 and 10 Mev) and electron (2 and 5 Mev) irradiation tests. Selected transistors of the following constructions were tested; grown, diffused mesa, diffused planar, and epitaxial planar. Anomalous current gain degradation was observed for irradiated transistors operating at low currents. This damage has been shown to be the result of ionization-induced changes in surface recombination velocity. Transistor damage constants for displacement damage from proton and electron irradiation tests are compared with those found from neutron and gamma ray tests.

Author Information

Brown, R., R.

The Boeing Company, Seattle, Wash.

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Details

Developed by Committee: E10

Pages: 100–120

DOI: 10.1520/STP44608S

ISBN-EB: 978-0-8031-6009-5

ISBN-13: 978-0-8031-6163-4

Proton and Electron Permanent Damage in Silicon Semiconductor Devices

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