Transient Radiation Effects in Semiconductor Devices

J. Crowe; A. Sauer

doi:10.1520/STP44607S

SYMPOSIA PAPER Published: 01 January 1965

STP44607S

Transient Radiation Effects in Semiconductor Devices

Source

Transistors in conventional simple circuits were exposed to bursts of x-radiation from a 600 Kv flash x-ray machine. Analyses of the circuit responses are given in terms of electrical equivalent circuits. Electrical and radiation tests are compared.

Author Information

Crowe, J., W.

North American Aviation, Inc., Canoga Park, Calif.

Sauer, A., J.

North American Aviation, Inc., Canoga Park, Calif.

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Details

Developed by Committee: E10

Pages: 61–99

DOI: 10.1520/STP44607S

ISBN-EB: 978-0-8031-6009-5

ISBN-13: 978-0-8031-6163-4

Transient Radiation Effects in Semiconductor Devices

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