Evaluation of Polycrystalline Silicon Batches for Czochralski Crystal Pulling

H. Kramer

doi:10.1520/STP44495S

SYMPOSIA PAPER Published: 01 January 1963

STP44495S

Evaluation of Polycrystalline Silicon Batches for Czochralski Crystal Pulling

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From considerations of basic statistical and crystal-pulling functions, formulas have been developed which relate the quality and consistency of polycrystalline silicon batches (as expressed by the mean dopant concentration and the standard deviation of pulled sample crystals) to the probable resistivity yield of Czochralski-grown single crystals, in terms of the desired resistivity and the allowable resistivity range. A method which permits the independent determination of the standard deviation of the crystal-pulling equipment and of the polycrystalline silicon itself is presented.

These formulas and method may serve as a generally valid basis for the statistical evaluation of polycrystalline silicon batches.

Author Information

Kramer, H., G.

Monsanto Chemical Co., St. Louis, Mo.

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Details

Developed by Committee: F01

Pages: 213–221

DOI: 10.1520/STP44495S

ISBN-EB: 978-0-8031-5985-3

ISBN-13: 978-0-8031-6139-9

Evaluation of Polycrystalline Silicon Batches for Czochralski Crystal Pulling

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