The Use of Semiconductor Lithium Drifted P-I-N Junction Detectors for Dosimetry

Norman Baily; Gordon Kramer

doi:10.1520/STP41749S

SYMPOSIA PAPER Published: 01 January 1963

STP41749S

The Use of Semiconductor Lithium Drifted P-I-N Junction Detectors for Dosimetry

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Applications of the lithium drifted p-i-n junction semiconductor radiation detector in dosimetry are explored. Data on wavelength dependence for electromagnetic radiation, gamma-ray spectroscopy, and absolute sensitivity are given. The use of the device as the active component for a Bragg-Gray dosimeter is discussed. The application of the device to the measurement of charged particle spectra is discussed and typical experimental determinations are presented. The use of the detector for neutron dosimetry is discussed and the fundamental interactions for both thermal and fast neutrons are presented. Data on the stability of the active volume and the influence of storage conditions are presented.

Author Information

Baily, Norman, A.

Hughes Research Laboratories, Malibu, Calif.

Kramer, Gordon

Hughes Research Laboratories, Malibu, Calif.

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Details

Developed by Committee: E10

Pages: 151–161

DOI: 10.1520/STP41749S

ISBN-EB: 978-0-8031-5984-6

ISBN-13: 978-0-8031-6138-2

The Use of Semiconductor Lithium Drifted P-I-N Junction Detectors for Dosimetry

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