Characterization of Silicon Dioxide Surfaces by Successive Determinations of the Solution Rate

H Baumann

doi:10.1520/STP38666S

SYMPOSIA PAPER Published: 01 January 1981

STP38666S

Characterization of Silicon Dioxide Surfaces by Successive Determinations of the Solution Rate

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The successive determination of the solution rate in sodium hydroxide or in buffer solutions may serve to establish the extent of surface defects and the thickness of the more or less amorphous layer of silicon dioxide (SiO₂) dusts. The solution rate is a sensitive measurement for the energetic and thus crystallographic surface structure. Quartz surface modification due to thermal treatment is shown by examples. Furthermore, it is possible to produce quartz with a “pure” surface. The results of cell and animal experiments performed with crystallographic pure quartz specimens and with the same specimens coated with thin layers of amorphous silica are discussed.

Author Information

Baumann, H

Silicosis Research Institute, Bochum, West Germany

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Details

Developed by Committee: E34

Pages: 30–47

DOI: 10.1520/STP38666S

ISBN-EB: 978-0-8031-5555-8

ISBN-13: 978-0-8031-0734-2

Characterization of Silicon Dioxide Surfaces by Successive Determinations of the Solution Rate

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