Band Structure Calculations of the Two-Photon Absorption Coefficients of GaAs, InP, CdTe, and ZnSe

A Vaidyanathan; AH Guenther; SS Mitra

doi:10.1520/STP37036S

SYMPOSIA PAPER Published: 01 October 1981

STP37036S

Band Structure Calculations of the Two-Photon Absorption Coefficients of GaAs, InP, CdTe, and ZnSe

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The two-photon absorption coefficients of crystalline GaAs, InP, CdTe and ZnSe at 1.064 μm and 0.694 μm are calculated by means of a new model which combines the elements of second order perturbation thoery and band structure calculations. A sufficient number of intermediate states are included to assure adequate convergence. This calculational procedure is shown to represent a significant improvement over currently available theoretical models, and the results are in good agreement with available experimental data.

Author Information

Vaidyanathan, A

Guenther, AH

Mitra, SS

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Details

Developed by Committee: F01

Pages: 432–437

DOI: 10.1520/STP37036S

ISBN-EB: 978-0-8031-4820-8

ISBN-13: 978-0-8031-4500-9

Band Structure Calculations of the Two-Photon Absorption Coefficients of GaAs, InP, CdTe, and ZnSe

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