Epitaxial Regrowth and Defects in Laser Irradiated Single Crystal Ni

CW Draper; L Buene; DC Jacobson; JM Poate; S Nakahara

doi:10.1520/STP37012S

SYMPOSIA PAPER Published: 01 October 1981

STP37012S

Epitaxial Regrowth and Defects in Laser Irradiated Single Crystal Ni

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We have used Q-switched Nd:YAG irradiation to melt surface layers of metallic single crystal nickel. The quality of the epitaxially regrown layers has been determined by Rutherford backscattering and channeling as well as by TEM. TEM shows a high density of extended defects (dislocation tangles and walls). We have also observed significant differences between irradiated <100> and <111> crystals cut from the same Ni boule. One explanation for the orientation dependence is that slip occurs more easily in 111 planes of fcc structures and consequently there is a higher density of defect nucleation centers for 111 liquid phase regrowth.

Author Information

Draper, CW

Buene, L

Jacobson, DC

Poate, JM

Nakahara, S

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Developed by Committee: F01

Pages: 222–226

DOI: 10.1520/STP37012S

ISBN-EB: 978-0-8031-4820-8

ISBN-13: 978-0-8031-4500-9

Epitaxial Regrowth and Defects in Laser Irradiated Single Crystal Ni

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