Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance

AK Hochberg

doi:10.1520/STP36189S

SYMPOSIA PAPER Published: 01 January 1983

STP36189S

Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance

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Results of ellipsometric measurements are presented for arsenic implants in silicon at doses from 2 × 10¹³ to 8 × 10¹⁵ cm⁻² and energies from 30 to 180 keV. For implanters which mechanically scan wafers through the ion beam, it is possible to construct curves relating ellipsometric parameters to implant parameters. Reproducible ellipsometric results are strongly dependent on wafer preparation and precise setting and control of implant energies. Spectral reflectance measurements of implanted samples show that this method may be also used for implant monitoring.

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Hochberg, AK

TRW LSI Products, La Jolla, Calif.

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Developed by Committee: F01

Pages: 509–533

DOI: 10.1520/STP36189S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance

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