Determination of Oxygen Concentration in Silicon by Infrared Absorption

T Abe; S Gotoh; N Ozawa; T Masui

doi:10.1520/STP36185S

SYMPOSIA PAPER Published: 01 January 1983

STP36185S

Determination of Oxygen Concentration in Silicon by Infrared Absorption

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Infrared absorption measurement and activation analyses were carried out for various CZ crystals with different oxygen concentrations. Data for infrared (IR) absorption were found to vary depending upon various factors such as wafer thickness and surface finishing. Under well-defined experimental conditions, however, an accurate linear correlation between the IR absorption and oxygen concentration measured by activation analysis was obtained: 6.0 × absorption coefficient = oxygen concentration in parts per million atomic (ppma).

Author Information

Abe, T

R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan

Gotoh, S

R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan

Ozawa, N

R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan

Masui, T

R&D Center, Shin-Etsu, Handotai Company, Gunma-Ken, Japan

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Details

Developed by Committee: F01

Pages: 469–476

DOI: 10.1520/STP36185S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Determination of Oxygen Concentration in Silicon by Infrared Absorption

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