Analysis of Infrared Spectra for Oxygen Measurements in Silicon

RK Graupner

doi:10.1520/STP36184S

SYMPOSIA PAPER Published: 01 January 1983

STP36184S

Analysis of Infrared Spectra for Oxygen Measurements in Silicon

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The effect of multiple reflections when analyzing the infrared spectra for oxygen measurements in silicon wafers is important. It may cause errors up to 20% when ignored. The procedure and calculations to derive oxygen concentration from the spectra by taking into account this effect is described in detail. The effect of back-surface finish on the measurements is also discussed.

Author Information

Graupner, RK

Wacker Siltronic Corporation, Portland, Ore.

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Details

Developed by Committee: F01

Pages: 459–468

DOI: 10.1520/STP36184S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Analysis of Infrared Spectra for Oxygen Measurements in Silicon

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