Temperature-Dependent Infrared Characterization of Silicon Wafers

DG Mead; RM Gummer; CR Anderson

doi:10.1520/STP36183S

SYMPOSIA PAPER Published: 01 January 1983

STP36183S

Temperature-Dependent Infrared Characterization of Silicon Wafers

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The use of infrared measurements to characterize impurities in doped semiconducting silicon wafers at room and low temperatures is reviewed. Examples include the detection of antimony, arsenic, boron, phosphorus, carbon, and oxygen impurities; the spectral features of these elements are qualitatively discussed. In particular, the design and implementation of a cryostat suitable as an accessory to an infrared interferometer for nondestructive characterization of large-diameter silicon wafers at liquid nitrogen and liquid helium temperatures are also given.

Author Information

Mead, DG

Nicolet Instrument Corporation, Madison, Wis.

Gummer, RM

Nicolet Instrument Corporation, Madison, Wis.

Anderson, CR

Nicolet Instrument Corporation, Madison, Wis.

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Details

Developed by Committee: F01

Pages: 445–458

DOI: 10.1520/STP36183S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Temperature-Dependent Infrared Characterization of Silicon Wafers

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