Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

JC Allison; OF Maxwell; R Schindler; M Domenici

doi:10.1520/STP36178S

SYMPOSIA PAPER Published: 01 January 1983

STP36178S

Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

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Thermal donor activation and related intrinsic pn-junctions are used to characterize outdiffusion and precipitation of oxygen in silicon wafers. It is found that the depth of the p-layers and the depth of the denuded zones do not coincide. Both are found to depend on the wafer position within the crystal and are not solely related to the oxygen content.

Author Information

Allison, JC

Wacker Chemitronic, Burghausen, Calif., W. Germany

Maxwell, OF

Wacker Chemitronic, Burghausen, Calif., W. Germany

Schindler, R

Wacker Chemitronic, Burghausen, Calif., W. Germany

Domenici, M

Dynamit Nobel Silicon, S.P.A., Novara, Italy

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Details

Developed by Committee: F01

Pages: 362–368

DOI: 10.1520/STP36178S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

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