Dependence of Thin-Gate Oxide Properties on Processing

SK Lai

doi:10.1520/STP36173S

SYMPOSIA PAPER Published: 01 January 1983

STP36173S

Dependence of Thin-Gate Oxide Properties on Processing

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Thin-gate oxides (23 nm or less) will be very important for future very-large-scale-integration (VLSI) circuits. Oxides in this thickness range can be grown in different environments and temperatures. Breakdown, interface properties, and electron and hole trapping are affected by the growth conditions. The effect of growth and anneal temperature on insulator and interface properties will be examined. Such information is useful in optimizing process conditions for the long-term reliability of thin-gate oxides.

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Lai, SK

Intel Corporation, Santa Clara, Calif.

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Developed by Committee: F01

Pages: 260–272

DOI: 10.1520/STP36173S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Dependence of Thin-Gate Oxide Properties on Processing

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