A Review of Optical Lithographic Techniques for VLSI

DA Doane

doi:10.1520/STP36161S

SYMPOSIA PAPER Published: 01 January 1983

STP36161S

A Review of Optical Lithographic Techniques for VLSI

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Optical lithography using UV radiation (200 to 450 nm) has long been the workhorse in pattern generation for fabricating integrated circuit devices on silicon. Various techniques employing projection and proximity printing using electron-beam-generated photomasks have been developed to reduce feature sizes, to improve device yields, and to lower device fabrication costs. In this review, some optical lithographic techniques available for fabricating semiconductor devices are described. The advantages and limitations of the various methods are discussed with an emphasis on their suitability for the geometries required for VLSI.

Author Information

Doane, DA

Bell Laboratories, Murray Hill, N.J.

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Details

Developed by Committee: F01

Pages: 85–107

DOI: 10.1520/STP36161S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

A Review of Optical Lithographic Techniques for VLSI

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