Large-Diameter Czochralski Silicon Crystal Growth

W Lin; DW Hill

doi:10.1520/STP36157S

SYMPOSIA PAPER Published: 01 January 1983

STP36157S

Large-Diameter Czochralski Silicon Crystal Growth

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Some practical aspects of the engineering and science of large-diameter crystal growth are presented. Growth characteristics and problems associated with thermal stress and crystal shape are discussed. Oxygen distribution in the melt and its incorporation into the crytal are investigated. Finally, a double-crucible technique is presented and its application to N⁺ silicon growth is discussed.

Author Information

Lin, W

Semiconductor Materials Group, Bell Laboratories, Allentown, Pa.

Hill, DW

Semiconductor Materials Group, Bell Laboratories, Allentown, Pa.

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Details

Developed by Committee: F01

Pages: 24–38

DOI: 10.1520/STP36157S

ISBN-EB: 978-0-8031-4871-0

ISBN-13: 978-0-8031-0243-9

Large-Diameter Czochralski Silicon Crystal Growth

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