Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams

GE Possin; MS Adler; BJ Baliga

doi:10.1520/STP35138S

SYMPOSIA PAPER Published: 01 January 1980

STP35138S

Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams

Source

A method for depth profiling the minority carrier lifetime of heavily doped semiconductors is described. The technique utilizes an electron beam to generate electron hole pairs as a function of depth. By utilizing an exact numerical model for the semiconductor current flow equations, the minority carrier lifetime as a function of depth can be determined.

Author Information

Possin, GE

Electronic Materials Branch, Corporate Research and Development, General Electric Co., Schenectady, N.Y.

Adler, MS

Device Physics Unit, Power Semiconductor Branch, Corporate Research and Development, General Electric Co., Schenectady, N.Y.

Baliga, BJ

Power Semiconductor Branch, Corporate Research and Development, General Electric Co., Schenectady, N.Y.

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Details

Developed by Committee: F01

Pages: 192–209

DOI: 10.1520/STP35138S

ISBN-EB: 978-0-8031-4780-5

ISBN-13: 978-0-8031-0390-0

Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams

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