Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

Y Ichida; T Yanada; S Kawado

doi:10.1520/STP35131S

SYMPOSIA PAPER Published: 01 January 1980

STP35131S

Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

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The gettering effect of phosphorus diffusion to the back surface of a silicon wafer on oxidation-induced stacking faults has been studied by evaluating the generation lifetime from the transient response of metal oxide semiconductor (MOS) capacitors. The generation lifetime of wafers subjected to postoxidation phosphorus diffusion gettering is not remarkably decreased by the presence of stacking faults. On the other hand, the generation lifetime of waters subjected to preoxidation gettering is decreased by two orders of magnitude because of the presence of stacking faults. The result is explained by impurity precipitation to Frank partial dislocations bounding stacking faults.

Author Information

Ichida, Y

Silicon Technology Laboratory, Sony Corporation Research Center, Yokohama, Japan

Yanada, T

Silicon Technology Laboratory, Sony Corporation Research Center, Yokohama, Japan

Kawado, S

Silicon Technology Laboratory, Sony Corporation Research Center, Yokohama, Japan

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Developed by Committee: F01

Pages: 107–118

DOI: 10.1520/STP35131S

ISBN-EB: 978-0-8031-4780-5

ISBN-13: 978-0-8031-0390-0

Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

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