Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals

DC Wong; GF Wakefield

doi:10.1520/STP35129S

SYMPOSIA PAPER Published: 01 January 1980

STP35129S

Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals

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By using the surface photovoltage technique to measure minority carrier lifetime, it was found that grown-in defects of swirl in Czochralski-grown silicon crystals appear to be oxygen related and create recombination centers that degrade the lifetime more in the swirled areas. In addition, the degradation was also observed to be very sensitive to the previous thermal history of the starting material and to subsequent thermal treatments.

Author Information

Wong, DC

Arco Solar, Chatsworth, Calif.

Wakefield, GF

Materials Division, Chatsworth, Calif.

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Details

Developed by Committee: F01

Pages: 86–92

DOI: 10.1520/STP35129S

ISBN-EB: 978-0-8031-4780-5

ISBN-13: 978-0-8031-0390-0

Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals

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