SYMPOSIA PAPER Published: 01 January 1980
STP35126S

Effects of Carrier Lifetime and End-Region Recombination on the Forward Current and Switching Behavior of Power Pin Diodes

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It has been shown that the on-state current-voltage characteristic of power pin diodes can be expressed in terms of base lifetime, τB; ratio of base width, W, to diffusion length, LA; and end-region recombination effects, hp and hn. The switching characteristic can be described in terms of a normalized form of these parameters, including the current density, JT, for a range of device dimensions. Independent experimental evaluation of these parameters, together with the theories, has accurately predicted the current-voltage characteristic up to 450 A cm−2 and confirmed the general behavior of the switching characteristics of a set of pin diodes with dimensions in the range 1.5 ≤ W/LA ≤ 4.

Author Information

Cooper, RW
Philips Research Laboratories, Redhill, Surrey, England
Fagg, S
Philips Research Laboratories, Redhill, Surrey, England
Paxman, DH
Philips Research Laboratories, Redhill, Surrey, England
Slatter, JAG
Philips Research Laboratories, Redhill, Surrey, England
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Details
Developed by Committee: F01
Pages: 47–57
DOI: 10.1520/STP35126S
ISBN-EB: 978-0-8031-4780-5
ISBN-13: 978-0-8031-0390-0