SYMPOSIA PAPER Published: 01 January 1984
STP32681S

Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs

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We have carried out neutron transmutation doping of undoped, initially semi-insulating, Czochralski-grown GaAs. We employed a series of nine neutron doses, which added between 2×1015 and 5×1017 cm−3 Ge and Se to the samples. Electron concentrations determined from Hall effect measurements on annealed samples with the three highest doses agree with the concentration of added Ge and Se within 5%, although the uncertainty in the measurements is 20%. These data are consistent with photoluminescence data which suggest 10% of the amphoteric Ge acts as an acceptor in the annealed material. Room temperature and temperature dependent Hall data place an upper limit of 4.9×1015 cm−3 on the concentration of donors of intermediate depth, consistent with our model for semi-insulating material.

Author Information

Hunter, AT
Young, MH
Winston, HV
Marsh, OJ
Hart, RR
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Details
Developed by Committee: F01
Pages: 575–586
DOI: 10.1520/STP32681S
ISBN-EB: 978-0-8031-4915-1
ISBN-13: 978-0-8031-0403-7