Effect of Stable Crack Growth on Fracture Toughness Determination for Hot-Pressed Silicon Nitride at Elevated Temperatures

D Munz; G Himsolt; J Eschweiler

doi:10.1520/STP28298S

SYMPOSIA PAPER Published: 01 January 1981

STP28298S

Effect of Stable Crack Growth on Fracture Toughness Determination for Hot-Pressed Silicon Nitride at Elevated Temperatures

Source

Fracture toughness of hot-pressed silicon nitride was determined between room temperature and 1300°C using four-point bend specimens with straight-through and chevron notches. For T > 1100°C fracture toughness increases due to crack branching and secondary cracking caused by the viscous flow of the grain boundary phase. To determine correct K-values with the specimens having a straight-through notch the stable crack extension at T > 1100°C has to be taken into account.

Author Information

Munz, D

University of Karlsruhe, West Germany

Himsolt, G

Deutsche Forschungs-und Versuchsanstalt für Luft-und Raumfahrt, Cologne, West Germany

Eschweiler, J

Deutsche Forschungs-und Versuchsanstalt für Luft-und Raumfahrt, Cologne, West Germany

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Details

Developed by Committee: E08

Pages: 69–84

DOI: 10.1520/STP28298S

ISBN-EB: 978-0-8031-4811-6

ISBN-13: 978-0-8031-0731-1

Effect of Stable Crack Growth on Fracture Toughness Determination for Hot-Pressed Silicon Nitride at Elevated Temperatures

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