High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

N Inoue; T Arai; T Nozaki; K Endo; K Mizuma

doi:10.1520/STP25776S

SYMPOSIA PAPER Published: 01 January 1987

STP25776S

High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

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High reliability infrared measurements of oxygen and carbon in silicon single crystals are presented. One is the preparation and distribution of standard sample sets with known oxygen contents. Oxygen content range is 5 to 11×10¹⁷ atoms/cm³ and the accuracy is estimated to be within 4×10¹⁶ atoms/cm³. The other is the establishment of a standard infrared measurement procedure for carbon performed by round robin infrared measurement and charged particle activation analysis. From the procedure the conversion coefficient is determined to be (8.5±0.9)×10¹⁶ atoms·cm⁻³/cm⁻¹.

Author Information

Inoue, N

Arai, T

Nozaki, T

Endo, K

Mizuma, K

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Details

Developed by Committee: F01

Pages: 365–377

DOI: 10.1520/STP25776S

ISBN-EB: 978-0-8031-5021-8

ISBN-13: 978-0-8031-0459-4

High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

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