Profile Control of Plasma Etched Polysilicon Using Implant Doping

T Abraham; R Theriault

doi:10.1520/STP25752S

SYMPOSIA PAPER Published: 01 January 1987

STP25752S

Profile Control of Plasma Etched Polysilicon Using Implant Doping

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The effect of implant doping using phosphorus on the edge profiles of plasma-etched polysilicon was investigated. Unique rounded profiles were obtained with as-implanted samples. The profile curvature showed a strong dependence on the fluorine to chlorine ratio in the etch process. There was good correlation between the lateral etch rate variation across the polysilicon thickness and the doping profile. Electrical line width measurements and SEM micrographs indicated line width control of ±0.3 µm. The step coverage of as-deposited PSG was studied and enhanced coverage was observed as the edge profile curvature was increased.

Author Information

Abraham, T

Theriault, R

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Details

Developed by Committee: F01

Pages: 204–219

DOI: 10.1520/STP25752S

ISBN-EB: 978-0-8031-5021-8

ISBN-13: 978-0-8031-0459-4

Profile Control of Plasma Etched Polysilicon Using Implant Doping

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