New Data Regarding the Thermal Laser-Damage Model and the Accumulation Phenomena in Silicon

SP Fry; RM Walser; MF Becker

doi:10.1520/STP24461S

SYMPOSIA PAPER Published: 01 January 1988

STP24461S

New Data Regarding the Thermal Laser-Damage Model and the Accumulation Phenomena in Silicon

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In this paper we propose a new statistical framework from which to view laser-induced damage in silicon, particularly N-on-1 damage effects such as accumulation. To select between possible models for damage, we obtained a refined data set for the statistics of nanosecond pulsed Nd:YAG laser damage to Si surfaces. The implications of this data for modeling laser damage experiments will be discussed.

Author Information

Fry, SP

Walser, RM

Becker, MF

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Details

Developed by Committee: F01

Pages: 492–500

DOI: 10.1520/STP24461S

ISBN-EB: 978-0-8031-5033-1

ISBN-13: 978-0-8031-4481-1

New Data Regarding the Thermal Laser-Damage Model and the Accumulation Phenomena in Silicon

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