Oxygen Threshold for Ion-Bean Sputter Deposited Oxide Coatings

H Demiryont; JR Sites

doi:10.1520/STP23120S

SYMPOSIA PAPER Published: 01 January 1986

STP23120S

Oxygen Threshold for Ion-Bean Sputter Deposited Oxide Coatings

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Reactive ion-beam sputter deposition, using a mixed argon-oxygen beam, has been demonstrated to be an effective technique for fabrication of dense, amorphous TiO₂, Ta₂O₅, and SiO₂ coatings. For both elemental and oxide targets there is a critical level of oxygen in the beam necessary to produce stoichiometric films. This threshold is seen in the films' composition, refractive index, and optical band gap. With elemental targets there is a major reduction in deposition rate at the oxygen threshold, strongly implying that an oxide layer is formed on the target, and is subsequently sputtered onto the substrate.

Author Information

Demiryont, H

Colorado State University, Fort Collins, CO

Sites, JR

Colorado State University, Fort Collins, CO

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Details

Developed by Committee: F01

Pages: 180–186

DOI: 10.1520/STP23120S

ISBN-EB: 978-0-8031-4997-7

ISBN-13: 978-0-8031-0960-5

Oxygen Threshold for Ion-Bean Sputter Deposited Oxide Coatings

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