An Anomalous Absorption Model to Account for Accumulation in N-on-1 Damage in Si and GaAs

MF Becker; RM Walser; NR Shetty

doi:10.1520/STP18601S

SYMPOSIA PAPER Published: 01 January 1988

STP18601S

An Anomalous Absorption Model to Account for Accumulation in N-on-1 Damage in Si and GaAs

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In this work we have investigated a model for anomalous optical absorption and laser damage in Si and GaAs. The model determines the increase in charge density in the vicinity of small, compared to the optical wavelength, clusters of defects in the material. The aim is to determine if increases in defect density in these regions can account for the experimentally observed decrease in damage threshold or accumulation. We found that 10% to 20% reductions in damage threshold could be accounted for by this model, but that this is only sufficient to account for some of the experimental observations.

Author Information

Shetty, NR

Karnataka Regional Engineering College, India

Becker, MF

Walser, RM

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Details

Developed by Committee: F01

Pages: 634–648

DOI: 10.1520/STP18601S

ISBN-EB: 978-0-8031-5032-4

ISBN-13: 978-0-8031-4477-4

An Anomalous Absorption Model to Account for Accumulation in N-on-1 Damage in Si and GaAs

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