Application of Recombination Lifetime Measurements in Silicon Wafer Manufacturing

MR Seacrist

doi:10.1520/STP15715S

SYMPOSIA PAPER Published: 01 January 1998

STP15715S

Application of Recombination Lifetime Measurements in Silicon Wafer Manufacturing

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Increasingly stringent demands are being placed on the surface and bulk metal contamination levels of silicon wafer starting material in order to meet ULSI device requirements. Recombination lifetime measurements are applied in silicon wafer manufacturing to monitor metal contamination from various processes including crystal growth, thermal treatments, cleaning processes, epitaxial growth, and to check final product quality. Applications of recombination lifetime measurements in silicon wafer manufacturing are reviewed. Comparisons of recombination lifetime data are made between measurement techniques.

Author Information

Seacrist, MR

MEMC Electronic Materials Inc, St. Peters, MO

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Details

Developed by Committee: F01

Pages: 318–327

DOI: 10.1520/STP15715S

ISBN-EB: 978-0-8031-5389-9

ISBN-13: 978-0-8031-2489-9

Application of Recombination Lifetime Measurements in Silicon Wafer Manufacturing

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