Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

A Kempf; P Blöchl; A Huber; F Fabry; L Meinecke

doi:10.1520/STP15710S

SYMPOSIA PAPER Published: 01 January 1998

STP15710S

Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

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A contamination experiment was carried to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as life-time killer and another general one. A comparison between DLTS-, SPV- and μ-PCD-results showed a very good correlation of all instruments. Copper was proved to have also a strong influence on lifetime measurement, especially in n-type Silicon. Cu is suspected to affect the efficiency of Oxide passivation. Nitrogen also seemed to have a considerable influence at least in connection with a Cu contamination.

Author Information

Kempf, A

Wacker Siltronic AG, Burghausen, Germany

Blöchl, P

Wacker Siltronic AG, Burghausen, Germany

Huber, A

Wacker Siltronic AG, Burghausen, Germany

Fabry, F

Wacker Siltronic AG, Burghausen, Germany

Meinecke, L

Techn. University Clausthal, Clausthal-Zellerfeld, Germany

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Developed by Committee: F01

Pages: 259–267

DOI: 10.1520/STP15710S

ISBN-EB: 978-0-8031-5389-9

ISBN-13: 978-0-8031-2489-9

Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

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