The Optical Excitation Effect in Transition Metal Doped CZ Silicon Wafers Revealed by the Microwave Photoconductive Decay Lifetime Measurement

K Kurita; T Shingyouji

doi:10.1520/STP15694S

SYMPOSIA PAPER Published: 01 January 1998

STP15694S

The Optical Excitation Effect in Transition Metal Doped CZ Silicon Wafers Revealed by the Microwave Photoconductive Decay Lifetime Measurement

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The prospect of identifying metallic impurities in p-type silicon has been studied by using the microwave photoconductive decay lifetime measurement method at various high injection levels. Samples intentionally doped with transition metals during crystal growth were prepared. It was found that point defects associated with Fe-B, Cr-B, and Ti, in decreasing order of effectiveness, degrade recombination lifetime in p-type Si.The effects of Fe-B pairs and Fe-B pair dissociation on recombination lifetime were also compared by various high injection levels.

Author Information

Kurita, K

Mitsubishi Materials Silicon Corporation, Omiya, Saitama, Japan

Shingyouji, T

, Noda-chi, Chiba-ken, Japan

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Details

Developed by Committee: F01

Pages: 59–67

DOI: 10.1520/STP15694S

ISBN-EB: 978-0-8031-5389-9

ISBN-13: 978-0-8031-2489-9

The Optical Excitation Effect in Transition Metal Doped CZ Silicon Wafers Revealed by the Microwave Photoconductive Decay Lifetime Measurement

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